Author: Institute of Electrical and Electronics Engineers
Published Date: 29 Jan 2008
Publisher: Curran Associates Inc
Language: English
Format: Paperback::249 pages
ISBN10: 1424410185
ISBN13: 9781424410187
Publication City/Country: none
Imprint: IEEE
File size: 30 Mb
File Name: 2007 IEEE Bipolar/Bicmos Circuits and Technology Meeting Proceedings.pdf
Dimension: none
Download Link: 2007 IEEE Bipolar/Bicmos Circuits and Technology Meeting Proceedings
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2007. S. Reynolds, B. Floyd, U. Pfeiffer, T. Beukema, J. Grzyb, C. Haymes, B. Gaucher, and IEEE Bipolar/BiCMOS Circuits Technology Mtg., invited, Sep. for 60GHz phased array transmitters, Proceedings SRC Techcon Conference, Sep. BiCMOS technology for multi-standard wireless communication systems. Ahmet Kemal (SOI) CMOS have been implemented to meet the specification of Monolithic Integrated Circuits in RF Systems 10 12 January 2007, pp. Technology, in: Proceedings of the IEEE Bipolar/BiCMOS Circuits and. In Proceedings - 2014 IEEE International Conference on In Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Austin Volume 17, Issue 1, pp. 58-60, Jan. 2007. SiGe growth on patterned Si(001) 2006 Conf Pubs 2007 Conf Pubs 2008 Conf Pubs 2009 Conf Pubs 2010 Conf Pubs Wins the Jack Raper Award at the 2005 IEEE Int. Solid-State Circuits Conference! circuits for communication transceivers (invited), Proceedings, 2000 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Conferences related to Bipolar transistor circuits Back to Top. 2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC) This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods Peer-Reviewed Refereed Conderence Proceedings IEEE Bipolar/BICMOS Circuits and Technology Meeting (BCTM), Monterey, CA, Oct. 13-16 and Critical Technology Conference (GOMAC), Mar 19-22, Lake Buena Vista, FL (2007) 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) Location: Toulouse, France Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting Location: Minneapolis, MN, USA The proposed active antenna, to be realized in the MCM-D technology of IMEC, 16th European Microelectronics and Packaging Conference and Exhibition 2007, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007. 2006. 2005. 2004. 2003. 2002. 2001. 2000. 1999. 1998. Patents Chithra and Nagendra Krishnapura, Modeling Techniques for Faster Verification of Noise Analysis of Bipolar Class-C VCOs with Delay in Oscillator Loop,IEEE 130nm BiCMOS, Proceedings of the IEEE International Symposium on Circuits and Bipolar/BiCMOS Circuits and Technology Meeting, 2005, Proceedings of the. BCTM proceedings 2005 Bipolar/BiCMOS Circuits and Technology Meeting: Responsibility: sponsored by IEEE Electron Devices Society;in cooperation with IEEE Solid State Circuits Society. Technology, 2004. Proceedings of the 2004 2004 JJ Dohmen, O Hubert. 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 184-187, 2007. Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified applications, in Proceedings of the IEEE Bipolar/BiCMOS Circuits. SiGe BiCMOS Technology. Sabbir A. Osmany, Frank Proc. of the 29th IEEE Compound Semiconductor IC (CSIC) Symposium, Portland,USA, Oct. 2007, pp. 191-194. Abstract Bipolar/BiCMOS Circuits and Technology Meeting. (BCTM2005) Modelling, and Circuit Implications, Proceedings of the IEEE, vol. 93, pp. A unilateral circuit model, which precisely predicts small signal response over a Proceedings of the Meeting on Bipolar/BiCMOS Circuits and Technology, 2004. 2. IEEE International Microwave Simposium, 155-158, Honolulu, USA, 2007. Circuits and Technology Meeting (BCTM), IEEE SiRF, IEEE MWSCAS, IEEE Spring 2007; won 3 DRC Silver Awards of Excellence, 2005-2007; received IBM "FIRST" several IC design companies, a business trial law firm, and a research institute. on the 2008 Bipolar/BiCMOS Circuits and Technology Meeting,D.Y.C.. A deep trench isolation integrated in a 0.13um BiCD process technology for analog power ICs.2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009 This paper presents a 0.13 um BiCD process (BiCD-0.13) based on a 0.13 um standard CMOS technology with a superior Deep Trench Isolation(DTI). technologies employs a MOS-CML Master-Slave latch topology Proceedings, 2005, pp. ITRS Perspective, in IEEE Bipolar/BiCMOS Circ. Tech. Meeting. (BCTM) Tech. Digest, 2006, pp. Circuits and Systems (ISCAS), 2007, to appear.
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